Threshold Voltage Modulation Using $\hbox{N}_{2}^{+}$ Implantation Into Substrate for Ni Fully Silicided Gate/High-$k$ NMOS

Autor:	H. Oda, K. Shibahara, Tomohiro Yamashita, Katsumi Eikyu, Y. Nishida, Y. Inoue
Rok vydání:	2008
Předmět:	Secondary ion mass spectrometry Materials science Ion implantation Spreading resistance profiling Gate dielectric Analytical chemistry Substrate (electronics) Electrical and Electronic Engineering NMOS logic Electronic Optical and Magnetic Materials Threshold voltage High-κ dielectric
Zdroj:	IEEE Electron Device Letters. 29:1163-1166
ISSN:	1558-0563 0741-3106
Popis:	The significance of controlling threshold voltage using nitrogen molecule ion (N2 +) implantation into a silicon substrate was demonstrated for an n-channel MOS with a nickel fully silicided gate electrode and a high-k gate dielectric. We have clarified the idea that a small part of the implanted nitrogen was activated and acted as a counter dope for a channel by secondary ion mass spectrometry analysis, spreading resistance analysis, and inverse modeling analysis of MOS capacitance-voltage characteristics. It was found that N2 + implantation had an advantage over N+ implantation for forming a shallow counter-dope layer because the nitrogen-nitrogen pair has large diffusion coefficient, which resulted in a steep profile of nitrogen in a substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::223c7cf08027fe9d9369ff3f3d9b6108 https://doi.org/10.1109/led.2008.2004416 Zobrazit plný text záznamu