Fine structure in the I–V characteristics of GaAs/AlGaAs submicron diameter triple barrier diodes
| Autor: | Michael Pepper, G. A. C. Jones, David A. Ritchie, H. Asahi, R. T. Syme, V. J. Law, J. E. F. Frost, M. Tewordt, Michael Kelly |
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| Rok vydání: | 1992 |
| Předmět: |
Physics
Condensed matter physics Period (periodic table) Phonon Surfaces and Interfaces Landau quantization Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electron transport chain Surfaces Coatings and Films Magnetic field Amplitude Materials Chemistry Quantum tunnelling Diode |
| Zdroj: | Surface Science. 267:388-391 |
| ISSN: | 0039-6028 |
| Popis: | We have studied electron transport in GaAs/AlGaAs triple barrier diodes with diameters to down d ≈ 200 nm. At and below d ≈ 2 μ m, we observe fine structure in the main resonant tunneling peaks. The period and amplitude appear to be independent of d . In diodes with d ≈ 5 μ m we observe a series of subsidiary peaks which shift in bias when a high magnetic field is applied. This can be ascribed to transitions between totally (zero dimensional) quantized states (Landau levels) in the two wells, together with the emission of a longitudinal optical phonon. Going down to d ⩽ 2 μ m, the shift is not observed. These observations cannot be explained by a conventional surface-depletion model of lateral confinement, and we suggest some alternative mechanisms for the confinement. |
| Databáze: | OpenAIRE |
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