Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

Autor:	Jacek M. Baranowski, B. Suchanek, Krzysztof Pakuła, Maria Kaminska, M. Palczewska
Rok vydání:	1997
Předmět:	Metal Materials science Electrical transport visual_art Electron concentration Doping Isotropy visual_art.visual_art_medium Analytical chemistry General Physics and Astronomy Chemical vapor deposition Shallow donor Line (formation)
Zdroj:	Acta Physica Polonica A. 92:1001-1004
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.92.1001
Popis:	Electrical transport and ESR studies were performed on the state-of-the-art GaN 1ayers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2 x 10 17 cm-1 and mobility up to 500 cm 2 /(V s) were achieved whereas hole concentration up to 7 x 1017 cm-3 and mobility about 16 cm2 /(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed tle presence of two resonance absorption lines. One of them with g1 = 1.9487 and g|| = 1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g = 2.0032 and it is discussed.
Databáze:	OpenAIRE
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