| Autor: |
Michael Schlechtweg, T. Krems, L. Verweyen, W.H. Haydl, Hermann Massler, Axel Hulsmann, M. Neumann, Axel Tessmann |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192). |
| DOI: |
10.1109/mwsym.1998.705084 |
| Popis: |
A W-band variable gain amplifies MMIC with 37 dB gain at 94 GHz and a gain control range of over 70 dB has been developed. The circuit consists of four dual-gate HEMT stages, using a 0.15 /spl mu/m AlGaAs-InGaAs-GaAs PM-HEMT technology. The chip was realized in coplanar technology and requires an area of only 1/spl times/3 mm/sup 2/. The resulting power gain density is 12 dB/mm/sup 2/ at 94 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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