Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing
| Autor: | Kiyoji Ikeda, Tomoaki Nishimura, Michitaka Yoshino, Tohru Nakamura, Kazuo Kuriyama, Kota Sugamata |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Annealing (metallurgy) business.industry Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion chemistry.chemical_compound Ion implantation Carbon film chemistry 0103 physical sciences Optoelectronics Rapid thermal annealing 0210 nano-technology business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 449:49-53 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2019.04.008 |
| Popis: | A new activation annealing technology that can efficiently and uniformly heat the ion implanted transparent GaN substrates was developed. Annealing temperature was reduced by 80–50 °C using the GaN substrates coated with the carbon film on the backside. The performance of ion implanted GaN MISFETs using the newly developed low temperature annealing method were also demonstrated. |
| Databáze: | OpenAIRE |
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