Vertical-type organic device using thin-film ZnO transparent electrode

Autor:	Kazuhiro Kudo, Masakazu Nakanura, Takeshi Okawara, Hiroyuki Iechi, Masatoshi Sakai
Rok vydání:	2006
Předmět:	Materials science business.industry Transistor Energy Engineering and Power Technology Heterojunction law.invention Sputtering law Electrode OLED Optoelectronics Electrical and Electronic Engineering Thin film business Layer (electronics) Diode
Zdroj:	Electrical Engineering in Japan. 158:49-55
ISSN:	1520-6416 0424-7760
DOI:	10.1002/eej.20151
Popis:	We propose a double heterojunction organic light-emitting diode (OLED) using a zinc oxide (ZnO) film, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the basic characteristics of the OLED depending on the ZnO sputtering conditions are investigated. Excellent characteristics of the novel OLED were obtained, as high as 470 cd/m2 at 22 V and 7.6 mA/cm2. The results obtained here demonstrate that the vertical organic light-emitting transistor (OLET) using a ZnO layer as an electron injection layer is promising as a key element for flexible sheet displays. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 158(2): 49–55, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20151
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2210aaa60b4896bfef0a9dfe311f3a9b https://doi.org/10.1002/eej.20151 Zobrazit plný text záznamu Plný text