Modification of Silicon Surfaces with H 2 SO 4 : H 2 O 2 : HF and HNO 3 : HF for Wafer Bonding Applications
| Autor: | Karin Ljungberg, Ulf Jansson, Stefan Bengtsson, Anders Söderbärg |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Silicon
Renewable Energy Sustainability and the Environment business.industry Wafer bonding Stereochemistry Photoemission spectroscopy Oxide chemistry.chemical_element Sulfuric acid Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Etching (microfabrication) Oxidizing agent Materials Chemistry Electrochemistry Optoelectronics business Porosity |
| Zdroj: | Journal of The Electrochemical Society. 143:1709-1714 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1836705 |
| Popis: | Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces prior to wafer bonding. The chemical oxide thickness can be adjusted between 0 and 10 Angstrom by tuning the HF content of the mixtures |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|