Measurement of space charge generation-recombination current in Hg1−xCdxTe photodiodes by deep level transient spectroscopy
| Autor: | A.K. Sood, D.L. Polla, P. LoVecchio, M. B. Reine, M.W. Scott, C.E. Jones |
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| Rok vydání: | 1981 |
| Předmět: |
Deep-level transient spectroscopy
Chemistry business.industry Condensed Matter Physics Electron spectroscopy Space charge Electronic Optical and Magnetic Materials Photodiode law.invention Depletion region law Materials Chemistry Optoelectronics Transient response Electrical and Electronic Engineering business Diode Voltage |
| Zdroj: | Solid-State Electronics. 24:719-723 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(81)90052-6 |
| Popis: | Deep Level Transient Spectroscopy (DLTS) measurements have been used to characterize n+ − pHg1−xCdxTe junction photodiode performance. Deep level results obtained on a x = 0.320 liquid phase epitaxial grown photodiode and a x = 0.219 bulk quench anneal-grown photodiode have identified deep Shockley-Read recombination centers. Detailed characterization of trap energy, trap density, and capture cross sections for these traps located within the diode depletion region have been used to predict a space charge generation-recombination current and dynamic resistance-area product at zero bias voltage. This paper presents for the first time a direct correlation of DLTS parameters with photodiode device performance. |
| Databáze: | OpenAIRE |
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