| Popis: |
A Wafer scale encapsulation process has been developed for devices that require wide gaps. In this experiment, we focus on devices that have gaps or trenches 10-20μm wide. This process can also be applied to larger gaps of the order of 50-100μm. The chief focus of the process development is to achieve a wafer scale encapsulation technique, which can avoid deposition of very thick LPVCD oxide. Once the processing and encapsulation is carried out, SEM images are taken to ensure that the device is completely released and no sacrificial material is left behind.Copyright © 2006 by ASME |
