Gate Voltage Dependent 1/f Noise Variance Model in n-Channel MOSFETs

Autor:	R. Khatami, Fumitaka Abe, Shunichiro Todoroki, Masaki Kazumi, T. Wang, Takuya Totsuka, Hitoshi Aoki, Hiroaki Kobayashi, Yukiko Arai
Rok vydání:	2014
Předmět:	Materials science Negative-bias temperature instability Reverse short-channel effect Acoustics N channel Variance (accounting) Gate voltage Noise (electronics)
Zdroj:	Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2014.ps-3-6
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2204be7c49f9aacb33a8f273d723481a https://doi.org/10.7567/ssdm.2014.ps-3-6 Zobrazit plný text záznamu