Formation of InxGa1−xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt‐solidification process

Autor:	Stephen Y. Chou, Yih Chang, Kurt H. Weiner, Ann F. Marshall, Thomas W. Sigmon
Rok vydání:	1990
Předmět:	Physics and Astronomy (miscellaneous) Excimer laser Chemistry medicine.medical_treatment Analytical chemistry Crystal growth Rutherford backscattering spectrometry Laser law.invention Full width at half maximum law medicine Wafer Thin film Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 56:1844-1846
ISSN:	1077-3118 0003-6951
Popis:	Heteroepitaxial InxGa1−xAs/GaAs structures have been formed for the first time by pulsed laser induced mixing of molecular beam epitaxy deposited In films (∼200 A) on GaAs (100) substrates. The process occurs by a melt‐induced, rapid‐mixing and solidification process driven by a XeCl pulsed excimer laser. The laser has a 27 ns full width at half maximum pulse width at 308 nm with its energy density of 0.28–0.61 J cm−2 homogenized into a 4×4 mm square area which is stepped across the wafer. InxGa1−xAs layers with x values, as determined by both x‐ray diffraction and Rutherford backscattering spectrometry simulation ranging from x=0.21–0.26 and thicknesses of 77–94 nm, have been formed. The formation of single‐crystal layers has been verified by 4He ion channeling and cross‐section transmission electron microscopy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22023f51792e32d1227e99f27427c64a https://doi.org/10.1063/1.103065 Zobrazit plný text záznamu