Carrier Transport In Multilayer n-MoSe2 And p-Germanium Heterojunction Back Gated Field Effect Transistors

Autor:	Gufran Ahmad, Wasi Uddin, Veerendra Dhyani, Samaresh Das
Rok vydání:	2020
Předmět:	Materials science Heterojunction field effect transistor chemistry business.industry Logic gate Optoelectronics chemistry.chemical_element Thermionic emission Heterojunction Field-effect transistor Germanium business Cmos compatible
Zdroj:	2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
DOI:	10.1109/vlsi-tsa48913.2020.9203706
Popis:	A CMOS compatible MoSe 2 /Ge heterojunction field effect transistor has been fabricated. The electrical characterization of asymmetric contact device has been studied by switching the source contact. Temperature dependent measurements reveals a barrier height of 73.8 meV at n-MoSe 2 /(Cr/Au) interface. These findings reveal the selection of source and drain is crucial for the design of such heterojunction devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2201b287445b1d04eca319e362d703f7 https://doi.org/10.1109/vlsi-tsa48913.2020.9203706 Zobrazit plný text záznamu