| Autor: |
Jirohta Kasagi, S. Narita, K. Neichi, M. Itoh, Yasuhiro Sakemi, Hidetomo Yoshida, Eiichi Yamaguchi, Toshimi Hitora |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 717:1-4 |
| ISSN: |
0168-9002 |
| Popis: |
We performed high-energy proton and electron irradiation on a GaN Schottky diode and investigated the effects on its electrical properties. No significant changes in the dark current or breakdown voltage of the diode were observed for fluences up to ∼ 10 14 protons / cm 2 . The currents increased by a factor of ∼ 10 3 at a fluence of ∼ 10 15 protons / cm 2 . The currents also fluctuated unstably at these fluences but this unstable behavior was not observed after a few months. Intrinsic defects may have been induced by particle irradiation and some of them annealed through a relaxation process. Under electron irradiation, the dark currents did not show a notable increase even with the fluence of ∼ 10 16 electrons / cm 2 . |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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