Post Cleaning for FEOL CMP with Silica and Ceria Slurries
| Autor: | Changhong Wu, Wei-Tsu Tseng, Tim McCormack, Ji Chul Yang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Metallurgy Abrasive Oxide 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Shallow trench isolation 0103 physical sciences Slurry Wafer 0210 nano-technology |
| Zdroj: | ECS Journal of Solid State Science and Technology. 6:P718-P722 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0101710jss |
| Popis: | Post cleaning experiments for front end of the line (FEOL) CMP with silica and ceria slurries are carried out on commercial polishers with 300 mm oxide, nitride, and integrated shallow trench isolation (STI) wafers. Considering the charge attraction or repulsion between particles and wafer surface, both acidic and basic clean chemicals are applied at different stages in the post CMP process sequence. Diluted hydrogen peroxide in a non-contact megasonic cleaner is used to remove ceria abrasive particles and polish residues with high efficiency. On-platen buff clean with or without pad conditioning can make an impact on the post CMP cleaning performance. Post CMP cleaning splits are executed in order to evaluate the effectiveness of each of the process steps and their roles in the overall cleaning performance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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