High Field Electrical Conduction in Pre-Formed Al–ZnS–Al Thin Films in Metal–Insulator–Metal Devices
Autor: | M. Y. Nadee, Nadeem Iqbal, A. U. Khosa, M. F. Wasiq |
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Rok vydání: | 2007 |
Předmět: | |
Zdroj: | Chinese Physics Letters. 24:2068-2069 |
ISSN: | 1741-3540 0256-307X |
DOI: | 10.1088/0256-307x/24/7/077 |
Popis: | The high field electrical conduction mechanism for the widely used ZnS thin films in the microelectronic industry is investigated. Experimental data on the dc conduction as a function of the applied bias for the Al–ZnS–Al devices is carefully compared with the theoretical equations given by Schottky and Poole–Frenkel. The results yield the value of the coefficient of the barrier lowering compatible with the Schottky theory rather than the Poole–Frenkel theory, which are also in agreement with the results reported earlier by Maekawa [Phys. Rev. Lett. 24 (1970) 1175] |
Databáze: | OpenAIRE |
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