Atomically Thin Al2O3 Films for Tunnel Junctions
| Autor: | Youpin Gong, Judy Z. Wu, Siyuan Han, Rongtao Lu, Huikai Xu, Feifan Su, Ridwan Sakidja, Alan Elliot, Ming Gong, Shi-Ping Zhao, Jamie Wilt |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Josephson effect Materials science business.industry General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Tunnel barrier 0103 physical sciences Microelectronics Optoelectronics 0210 nano-technology business Deposition process |
| Zdroj: | Physical Review Applied. 7 |
| ISSN: | 2331-7019 |
| Popis: | Metal-insulator-metal tunnel junctions (MIMTJs) have become a fundamental enabling technology for microelectronics, and obtaining a well controlled, atomically thin, high-quality insulating tunnel barrier is key to their progress. Through experiment and simulations, the authors establish an atomic-layer deposition process to make ultrathin Al${}_{2}$O${}_{3}$ barriers of superior quality to industry-standard AlO${}_{x}$. Their method can improve magnetic tunnel junctions or Josephson junctions, for example, and thus a host of applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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