| Autor: |
Ho-Kyu Kang, Hayoung Yi, Hong-Gun Kim, Yong-Soon Choi, Seok-Woo Nam, Young-Ho Koh, Mansug Kang, ByeongJu Bae, Namjin Cho, Seung-Heon Lee, Jinhyung Park, Chilhee Chung, Jun-Won Lee, Eunkee Hong, Seungmoo Lee |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 IEEE International Interconnect Technology Conference. |
| DOI: |
10.1109/iitc.2012.6251590 |
| Popis: |
Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new concept and precursor. Remote plasma during low temperature deposition and ozone treatment was adopted to stabilize the film. We also developed a novel Flowable CVD process which does not oxidize Si or electrode, resulted in removal of Si 3 N 4 stopper layer as an oxidation or diffusion barrier. After the application of Flowable CVD to 20nm DRAM ILD, we could reduce not only loading capacitance of Bit-line by 15% but also enhance comparable productivity. Through the successful development of sub-20nm DRAM ILD Gap-fill process, Flowable CVD was successful demonstrated as a promising candidate for mass production-worthy ILD in sub-20nm next generation devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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