RF operation in graded Al x Ga 1− x N ( x = 0.65 to 0.82) channel transistors
| Autor: | Antwon Coleman, Zane Jamal-Eddine, Yuewei Zhang, Shahadat H. Sohel, Sanyam Bajaj, Siddharth Rajan, Towhidur Razzak, Seongmo Hwang, M. Asif Khan, Wu Lu, Hao Xue |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Power switching Band gap Transistor Gate length Wide-bandgap semiconductor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law 0103 physical sciences Optoelectronics Field-effect transistor Channel (broadcasting) Electrical and Electronic Engineering 0210 nano-technology business Current density |
| Zdroj: | Electronics Letters. 54:1351-1353 |
| ISSN: | 1350-911X 0013-5194 |
| Popis: | The first report is presented on the RF operation of AlGaN channel transistor with Al-composition above 80%. The reported device is a polarisation-graded field effect transistor (PolFET) featuring an ultra-wide bandgap (UWBG) AlGaN channel with Al-composition grading from 65 to 82%. Transistors with a gate length of 0.8 μm were fabricated, with a current density of 265 mA/mm, the highest observed for AlGaN channel transistor with Al-composition above 80%, and f T/f MAX of 5.4/14.2 GHz. This demonstration of RF operation of polarisation-graded transistor provides a direction for achieving ultra-wide bandgap AlGaN based devices for high performance RF and power switching applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text