Low noise metamorphic HEMT devices and amplifiers on GaAs substrates

Autor:	Thomas E. Kazior, P.M. McIntosh, R. Wohlert, P. J. Lemonias, William E. Hoke, R.E. Leoni, S.M. Lardizabal, S.L.G. Chu, R.A. McTaggart, P.F. Marsh, C.S. Whelan, A.M. Bowlby, S. Kang
Rok vydání:	2003
Předmět:	Third-order intercept point Materials science Amplifier figures of merit business.industry Amplifier Distributed amplifier Optoelectronics Figure of merit High-electron-mobility transistor Noise figure business Noise (electronics)
Zdroj:	1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
Popis:	Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs metamorphic HEMTs on a GaAs substrate. These devices have been used to design and fabricate microwave and millimeter wave amplifiers. Amplifier results are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::21deb027fdb81222627a9f50e874e66a https://doi.org/10.1109/mwsym.1999.779435 Zobrazit plný text záznamu