Oxidation of silicon–germanium alloys. II. A mathematical model
| Autor: | S.-L. Zhang, François M. d'Heurle, P.-E. Hellberg, C. S. Petersson |
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| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 82:5779-5787 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.366444 |
| Popis: | A mathematical model of oxidation of SixGe1−x alloys is presented. The growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe1−x using numerical methods. The main feature of the model is the assumption of simultaneous oxidation of germanium and silicon when exposing the SixGe1−x to an oxidizing atmosphere. In accordance with thermodynamics, the GeO2 formed is subsequently reduced by the (free) silicon available at the interface between the growing SiO2 and the remaining SixGe1−x through a reduction reaction. Thus, the enhanced oxidation of silicon in the presence of germanium is modeled as a result of the rapid oxidation of germanium followed by the quick reduction of GeO2 by silicon. The growth of a mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 only occurs when the supply of silicon to the SiO2/SixGe1−x interface is insufficient. A comparison is made between simulation and experiment for wet oxidation (in pyrogenic steam) of polycrystalline SixGe1−x ... |
| Databáze: | OpenAIRE |
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