Accurate electron-cyclotron-resonance etching of semiconductor laser heterostructures using a simple laser reflectometer
| Autor: | M. A. Parker, R. J. Michalak, J.P. Drumheller, C.L. Tang, Douglas B. Shire, H.S. Wang, J. S. Kimmet |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Cyclotron resonance Laser Atomic and Molecular Physics and Optics Electron cyclotron resonance Electronic Optical and Magnetic Materials law.invention Semiconductor laser theory Semiconductor Optics Interference (communication) law Etching (microfabrication) Electrical and Electronic Engineering Reactive-ion etching business |
| Zdroj: | IEEE Photonics Technology Letters. 8:818-820 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.502105 |
| Popis: | An in situ method of monitoring the electron cyclotron resonance etching of III-V semiconductor heterostructures is discussed for in-plane lasers. Surface reflected and Fabry-Perot interference signals determine the etch depth, rate and surface quality. The etching accuracy is better than 500 /spl Aring/. The etch monitor eliminates the dependence of accurate etching on calibrated etch rates, as well as the need for selective gas etchants and etch-stop layers typically required for complex heterostructure devices. The presented in situ method can be integrated into a digital data acquisition system, for accurate, reproducible process control in an automated manufacturing environment. |
| Databáze: | OpenAIRE |
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