Measurements on a hole trap in neutron-irradiated silicon

Autor:	B.S. Avset
Rok vydání:	1997
Předmět:	Physics Nuclear and High Energy Physics Deep-level transient spectroscopy Silicon chemistry.chemical_element Activation energy Electron Atmospheric temperature range Cross section (physics) chemistry Neutron Irradiation Atomic physics Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 388:361-364
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(96)01245-4
Popis:	High resistivity n-type Si has been neutron irradiated and characterized by Deep Level Transient Spectroscopy (DLTS). In addition to common irradiation induced traps we have observed a hole trap with activation energy around 0.475 eV. For characterizing the trap we have observed the DLTS signal versus filling pulse bias combined with simulations of carrier concentrations. According to these measurements, the capture cross section is very small for holes as well as for electrons; of the order of 10 −18 –10 −20 cm 2 . The hole capture cross section is temperature dependent in the temperature range covered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::21cf016c0dd05ec1ec8b8688298c0fdb https://doi.org/10.1016/s0168-9002(96)01245-4 Zobrazit plný text záznamu Full Text from ScienceDirect