InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate
| Autor: | Po-Wen Sze, Yu Ju Lin, Kuan-Wei Lee, Yu-Chang Lee, Nan-Ying Yang, Mau-Phon Houng, Yeong-Her Wang |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Gate dielectric Transistor Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Gallium arsenide law.invention chemistry.chemical_compound chemistry Hardware_GENERAL law Gate oxide MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Breakdown voltage business Hardware_LOGICDESIGN Voltage |
| Zdroj: | Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.. |
| DOI: | 10.1109/icsict.2004.1435305 |
| Popis: | InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, it can be observed that the MOS-PHEMT has a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications. |
| Databáze: | OpenAIRE |
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