| Autor: |
Ravi Ranjan, Yogesh Kumar, R. K. Sarin, Ashish Raman |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Micro-Electronics and Telecommunication Engineering ISBN: 9789811523281 |
| DOI: |
10.1007/978-981-15-2329-8_42 |
| Popis: |
In this paper, a high-frequency differential ring dual-delay voltage-controlled oscillator (DR-VCO) is proposed. This 9 GHz DR-VCO is designed using 45 nm CNTFET technology. CNTFET is faster than MOSFET, and hence it provides a high tuning range. VCO with four-delay cells is designed in this work. This design consists of four-stage delay cells, and every delay cell is designed on dual-delay path topology. This topology results in high-output oscillation frequency which includes the range from 3 to 9 GHz. The observed phase noise at offset of 1 MHz frequency is −66 dBc/Hz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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