GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring
| Autor: | Chun Hsing Liu, Jei-Li Hou, Meng-Chu Chen, Shoou-Jinn Chang, Shuguang Li, Jinn-Kong Sheu, Ting-Jen Hsueh |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Fabrication business.industry Orders of magnitude (temperature) Wide-bandgap semiconductor Photodetector Gallium nitride Ring (chemistry) Electronic Optical and Magnetic Materials chemistry.chemical_compound Responsivity Planar chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 60:1178-1182 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2013.2239298 |
| Popis: | The authors report the fabrication of GaN-based planar p-i-n photodetectors (PDs) with and without the Be-implanted isolation ring. With the isolation ring, we achieved a much smaller leakage current below 10 pA. It was also found that the responsivity for the PD with the Be-implanted isolation ring was almost independent of the applied reverse bias. Furthermore, it was found that we could achieve a bias independent and much larger ultraviolet-to-visible rejection ratio to three orders of magnitude. Furthermore, smaller noise-equivalent-power value 8.18 × 10-16 W and larger detectivity 3.2 × 1013 cm·Hz0.5 · W-1 from the PD with the Be-implanted isolation ring. |
| Databáze: | OpenAIRE |
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