Effect of Doping Profile and the Work Function Variation on Performance of Double-gate TFET
| Autor: | Ahmed Shaker, Aya Sinjab, Muhammad Elgamal, Maritime Transport,Heliopolis,Cairo, Egypt, Mostafa Fedawy |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Materials Science (miscellaneous) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Industrial and Manufacturing Engineering law.invention Hardware_GENERAL law 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS Work function Electrical and Electronic Engineering Civil and Structural Engineering 010302 applied physics business.industry Ambipolar diffusion Mechanical Engineering Transistor 021001 nanoscience & nanotechnology Tunnel field-effect transistor Mechanics of Materials Electrode Optoelectronics Field-effect transistor 0210 nano-technology business Hardware_LOGICDESIGN Voltage |
| Zdroj: | International Journal of Integrated Engineering. 11 |
| ISSN: | 2600-7916 2229-838X |
| Popis: | Tunnel Field Effect Transistor (TFET) can be considered as one of the promising transistors because it can switch ON and OFF at lower voltages than the operation voltage of the metal oxide semiconductor field effect transistor (MOSFET). This paper presents the effects of gate electrode work function and the doping profile terminating within and outside the drain on the ambipolar current, the ION/IOFF ratio, and the subthreshold swing. The results show that, Gaussian doping profile terminating within the drain is the most promising for on/off ratio. All the simulations and results have been performed and obtained with the help of ATLAS device simulator (Silvaco) and MATLAB. |
| Databáze: | OpenAIRE |
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