Removing the Barriers to Next Generation'S Dielectric Films: In Situ Void-Free Planarized Films

Autor:	Mark A. Logan, Lloyd F. Wright, Joseph R. Monkowski
Rok vydání:	1990
Předmět:	In situ Void (astronomy) Materials science Ellipsometry business.industry Scanning electron microscope Chemical-mechanical planarization Optoelectronics Semiconductor device Dielectric business
Zdroj:	MRS Proceedings. 203
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-203-221
Popis:	In the next generation of semiconductor devices, minimum dimensions will be smaller, aspect ratios (height to width) of devices features will be larger, and BPSG dielectrics will be challenged to deal with these changes. A new process, which integrates deposition, flow, and anneal of BPSG films, and allows void-free filling of high-aspect-ratio trenches with excellent surface planarization, is presented in this paper. Scanning electron micrographs are used to show the extent of film coverage and planarization. Additional characterization includes ion chromatography, ellipsometry, stress measurements, and breakdown field measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2185098a3b234c49cee2fcdb3b5a6d2d https://doi.org/10.1557/proc-203-221 Zobrazit plný text záznamu Full text from SpringerLink