Energy and spatial distribution of an electron trapping center in the MOS insulator

Autor:	F. J. Feigl, V. J. Kapoor, S. R. Butler
Rok vydání:	1977
Předmět:	chemistry.chemical_compound Full width at half maximum chemistry Band gap Oxide General Physics and Astronomy Insulator (electricity) Trapping Electron Atomic physics Thermal conduction Isotropic etching
Zdroj:	Journal of Applied Physics. 48:739-749
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.323664
Popis:	The energy and spatial distributions of electrons trapped in the silicon‐dioxide layer of a metal‐oxide‐semiconductor structure have been determined. Visible–near‐uv trap photodepopulation techniques have been used measure these electron distributions through a series of reductions of the oxide layer thickness by chemical etching. Electron trapping centers which could be emptied by visible–near‐uv light were distributed uniformly throughout the oxide volume, with a volume density of order 1014 cm−3. These trapping centers produced a bell‐shaped distribution of localized electrons states within the SiO2 band gap. The width of this distribution was 0.42 eV (FWHM), and the peak was located 2.4–2.5 eV below the SiO2 conduction edge. The peak location (trap depth) increased systematically as the oxide layer was reduced in thickness. Trapped electrons which could not be released by visible–near‐uv light were determined to have an average concentration of 1015–1016 cm−3. These electrons had a significant excess ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::218410acc86c0434bdbed2c4f4d24048 https://doi.org/10.1063/1.323664 Zobrazit plný text záznamu