| Popis: |
Room temperature measurements were made of electrical conductivity (sigma), Hall coefficient (RH) and Seebeck coefficient (alpha) on filamentary samples of p-type CuInSe2 and CuIn 1-xGaxSe2 with xles0.3, cut from vertically grown Bridgman ingots. Analysis of the results was done on a two-carrier basis, due to the higher ratio of electron-to-hole mobility (b) in these materials compared to elemental semiconductors. This treatment yielded a preferred b-value of 5 and to lower calculated hole concentrations than (RHe)-1 and higher hole mobilities than RHsigma, based on a one-carrier interpretation. This effect was particularly marked in p-type samples with a hole concentration below 1017 cm-3, where even a few percent of minority electrons can play an important role |
