High-performance InGaAs-GaAs-AlGaAs broad-area diode lasers with impurity-free intermixed active region
| Autor: | Yan-Rui Zhao, Marek Osinski, Gennady A. Smolyakov |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Atomic and Molecular Physics and Optics Blueshift Gallium arsenide law.invention Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Current density Quantum well Diode |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 9:1333-1339 |
| ISSN: | 1077-260X |
| Popis: | Broad-area InGaAs-GaAs-AlGaAs double-quantum-well graded-index separate-confinement heterostructure lasers with as-grown and intermixed active regions were fabricated and characterized. An impurity-free vacancy diffusion method was used to intermix the quantum wells. Light-current characteristics of both types of lasers were used to extract information about the effects of intermixing process on threshold current density, internal optical loss, internal quantum efficiency, material gain, etc. Comparison between these parameters indicates comparable device performance, even though intermixing involved annealing at 1000/spl deg/C which resulted in a 42-nm wavelength blueshift. |
| Databáze: | OpenAIRE |
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