Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes
| Autor: | Piotr Mazur, R. Wasielewski, Faiz Rahman, Ali Z. Khokhar, R. Dylewicz |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy Gallium nitride law.invention chemistry.chemical_compound Optics chemistry law Optoelectronics Wafer Surface layer business Layer (electronics) Refractive index Diode Light-emitting diode |
| Zdroj: | Applied Physics B. 107:393-399 |
| ISSN: | 1432-0649 0946-2171 |
| DOI: | 10.1007/s00340-012-5017-6 |
| Popis: | We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a fine-grained surface with features around 35 nm. The textured surface layer acts as a graded refractive index layer with antireflection properties. Measurements show that photoluminescence intensity from such treated surfaces on a GaN LED wafer increases 2.2 times over that from pristine surfaces. These findings are also supported by computer modelling studies described here. |
| Databáze: | OpenAIRE |
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