The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces
| Autor: | James R. Chelikowsky, Cai-Zhuang Wang, Shengbai Zhang, Tzu-Liang Chan, Jaime Souto-Casares, Kai-Ming Ho |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Condensed matter physics business.industry Schottky barrier Fermi level Schottky diode General Chemistry Electronic structure Condensed Matter Physics Surface energy Condensed Matter::Materials Science symbols.namesake Semiconductor Quantum dot Materials Chemistry symbols Thin film business |
| Zdroj: | Solid State Communications. 217:43-46 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/j.ssc.2015.05.014 |
| Popis: | Schottky barriers form when semiconductors are in contact with metal overlayers establishing a common Fermi level. Few theoretical studies of these materials exist as electronic structure calculations are computationally intensive for mismatched interfaces. We explicitly model a Pb(111) film on a Si(111) substrate. For thick Pb overlayers, we find a bulk regime where the Fermi level is pinned. For thin film regimes (less than five overlayers), structural relaxations dominate the interfacial energy as charge transfer is suppressed by quantum confinement. In this case, the Schottky barrier height follows the trend of the metal work function. |
| Databáze: | OpenAIRE |
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