Implantation and diffusion of noble gas atoms during ion‐beam etching of silicon
| Autor: | H.‐U. Habermeier, J. Schmälzlin, Jörg Weber, W. D. Sawyer, G. Nabert |
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| Rok vydání: | 1990 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 68:6179-6186 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.346908 |
| Popis: | The excessive damage and high defect density generated during ion‐beam etching of crystalline Si is characterized by Rutherford backscattering, photoluminescence, and transmission electron microscopy. In samples etched at room temperature, a highly damaged surface layer (d≊5 nm) with a large concentration of noble gas atoms is detected and analyzed using Rutherford backscattering in axial channeling geometry. Point defects due to the low‐energy noble gas ion implantation are produced within a depth of 100 nm and deeper, and are monitored by their characteristic photoluminescence. The intensity of the noble‐gas‐defect photoluminescence is studied for different ion‐beam energies (200–2000 eV) and crystal orientations. A threshold to produce the defects can then be determined, leading to an estimate of the number of vacancies contained in the noble gas defect. Annealing of etched samples at 650 °C causes the formation of different new photoluminescent centers. Although little is known about the structure of ... |
| Databáze: | OpenAIRE |
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