On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology

Autor:	M.R. Chin, J. Zhao, J.Y.-C. Sun, K.Y. Liao, Guann-Pyng Li
Rok vydání:	2002
Předmět:	Materials science business.industry Polysilicon depletion effect Infrasound Transistor Bipolar junction transistor Electrical engineering Noise (electronics) law.invention Semiconductor law Optoelectronics Flicker noise business Common emitter
Zdroj:	1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
DOI:	10.1109/vtsa.1993.263668
Popis:	Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show that the 1/f noise of base current is proportional to I/sub b//sup 2/, and the 1/f noise from majority carrier transport through polysilicon grain boundaries is a primary source of 1/f noise. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2174ece3e5cda5256f11834389bea53f https://doi.org/10.1109/vtsa.1993.263668 Zobrazit plný text záznamu