Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic

Autor:	J.H. Neave, B.A. Joyce, M. J. Ashwin, Tim Jones, Eng Soon Tok
Rok vydání:	1998
Předmět:	education.field_of_study Materials science Silicon Population Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Nanotechnology Substrate (electronics) Gallium arsenide chemistry.chemical_compound chemistry Thin film education Arsenic Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 83:4160-4167
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.367169
Popis:	We have studied the relationship between the surface morphology, Si doping behavior, and arsenic incorporation kinetics for GaAs(110) thin films grown on singular substrates by molecular beam epitaxy. To obtain films with good surface morphology, homoepitaxial growth requires low substrate temperatures and high As:Ga flux ratios. Under these conditions, the Si-doped layers exhibit n-type behavior. Growth at higher temperatures and lower As:Ga flux ratios produces films with a poorer morphology, the n-type layers become increasingly compensated, and p-type layers are eventually formed. This growth-related site switching behavior and corresponding variation in surface morphology can be attributed to a low arsenic surface population, a consequence of the small and temperature-dependent arsenic incorporation coefficient for growth on GaAs(110).
Databáze:	OpenAIRE
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