Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

Autor:	Hyejung Choi, Won-joo Kim, Dongsoo Lee, Dooho Choi, Eun-hong Lee, Man Chang, In-Kyeong Yoo, Hyunjun Sim, Yunik Son, Hyunsang Hwang, Yoon-dong Park
Rok vydání:	2006
Předmět:	Materials science business.industry Schottky barrier Electrical engineering Niobium Oxide chemistry.chemical_element Non-volatile memory Stress (mechanics) chemistry.chemical_compound chemistry Modulation Optoelectronics Crystallite business Single crystal
Zdroj:	IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
DOI:	10.1109/iedm.2005.1609464
Popis:	We have investigated single crystal Nb-doped SrTiO3 in terms of its potential utility in nonvolatile memory applications. Compared with polycrystalline oxide (Nb2O5, ZrO x and Cr-SrTiO3), the Pt/single crystal Nb:SrTiO 3 Schottky junction exhibits excellent memory characteristics including uniformity of set/reset bias, die-to-die reproducibility, data retention at high temperature, reliability under cycle stress, and multi-bit operation characteristics. The switching mechanism might be explained by modulation of the Schottky barrier height by charge trapping at the interface
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2154ff990731bc94c7c826942f593c83 https://doi.org/10.1109/iedm.2005.1609464 Zobrazit plný text záznamu