Internal Field Analysis of High-Power Microwave in Impurities Semiconductor Materials

Autor: Jierong Guo, Xianchun Wang, Xinhua Cai
Rok vydání: 2009
Předmět:
Zdroj: 2009 5th International Conference on Wireless Communications, Networking and Mobile Computing.
DOI: 10.1109/wicom.2009.5302153
Popis: Caused the particularity of dielectric properties, Electromagnetic wave has their different transmit characteristics in impure semiconductor materials. Consider the high power microwave direct irradiation and transmission on semiconductor material, the law of electromagnetic waves disseminated in layered media is studied, and different substrates (usually medium and ideal conductor) are discussed separately. The treatment methods of doping concentration used in the simulation of semiconductor devices and transmission coefficient of the reflected theoretical formula of the different levels are calculated.
Databáze: OpenAIRE