Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Autor:	Johji Nishio, Kazutoshi Kojima, Sadafumi Yoshida, Toshiyuki Ohno, Tetsuo Takahashi, Takaya Suzuki, Hirotaka Yamaguchi, Yuuki Ishida, Koh Masahara
Rok vydání:	2002
Předmět:	Crystallography Materials science Mechanics of Materials business.industry Mechanical Engineering Optoelectronics General Materials Science Wafer Replication (microscopy) Condensed Matter Physics business Epitaxy Layer (electronics)
Zdroj:	Materials Science Forum. :447-450
ISSN:	1662-9752
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::214def19771df2bc3da4281efdcab9d4 https://doi.org/10.4028/www.scientific.net/msf.389-393.447 Zobrazit plný text záznamu