Efficiency Improvement of 630 nm AlGaInP Light-Emitting Diodes based on AlGaAs Bottom Window
| Autor: | Seong Un Kim, Su Chang Ahn, Hyung Joo Lee, Choong Hun Lee, Ju Ung Jo, Young-Jin Kim, Jae Hoon Kim |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Distributed Bragg reflector law.invention Gallium arsenide chemistry.chemical_compound Optics chemistry law Aluminium Optoelectronics Metalorganic vapour phase epitaxy business Diode Light-emitting diode |
| Zdroj: | Japanese Journal of Applied Physics. 52:102101 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.52.102101 |
| Popis: | Metal organic chemical vapor deposition (MOCVD) based aluminum gallium arsenide (AlGaAs) used as the bottom window (BW), which was inserted between the light-emitting diode (LED) structure and the absorbing substrate, has been proposed to improve the extraction efficiency of 630 nm AlGaInP LEDs. In an AlGaInP LED with this AlGaAs BW, enhanced light extraction efficiency was observed, as some of the light emitted from the active region to the absorbing substrate could pass out of the LED through the BW. In addition, it was found that a output power of 8 mW was obtained from an AlGaInP LED with both a BW and a distribution Bragg reflector (DBR), a nearly two fold improvement of over 4.2 mW that was obtained from a conventional one at an injection current of 80 mA. |
| Databáze: | OpenAIRE |
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