Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Encapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550°C

Autor:	Yoshiyuki Taniguchi, Tadahiro Ohmi, Kazuhide Ino
Rok vydání:	1998
Předmět:	Materials science Ion beam mixing Dopant Annealing (metallurgy) General Engineering Tantalum Analytical chemistry General Physics and Astronomy chemistry.chemical_element Crystallographic defect chemistry.chemical_compound Ion implantation chemistry Silicide Leakage (electronics)
Zdroj:	Japanese Journal of Applied Physics. 37:4277
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.37.4277
Popis:	Low-temperature processing, below 550°C, has been developed to form ultra-shallow, low-leakage, and low-contact-resistance junctions with tantalum silicide. We have experimentally demonstrated that the amount of residual defects after ion implantation and subsequent low-temperature annealing is strongly dependent on the substrate dopant concentration for both n + p and p + n junctions. It is also confirmed that ion implantation through Ta is not the main factor inducing larger leakage due to metal-knock-on. As a result, ultra-low leakage current (7.8×10-10 A/cm2 and 6.6×10-10 A/cm2 for n + p and p + n junctions at reverse-bias of 5 V) and ultra-shallow junction depth (70 nm and 40 nm for n + p and p + n junctions) have been achieved in Ta-silicided junctions at an annealing temperature of as low as ∼550°C, by employing an ultraclean ion implanter, Si-encapsulated silicidation, and low-dopant-concentration substrate.
Databáze:	OpenAIRE
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