| Autor: |
Ben Kaczer, J. Van Houdt, Pieter Weckx, Ph. J. Roussel, Gouri Sankar Kar, Robin Degraeve, Guido Groeseneken, Baojun Tang, Jacopo Franco, A. Suhane, M. Toledano-Luque, G. Van den bosch, Antonio Arreghini |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2012.6479009 |
| Popis: |
3D vertical poly-Si channel SONOS devices are emerging as the most prominent alternative for the 10nm nonvolatile memory technology node and beyond (1–2) provided that a significant drive current I READ is delivered at a fixed reading gate voltage V READ . Recently, we showed the discrete drops observed in the transfer characteristic (I D vs. V G ) of 3D transistors (Fig. 1) are linked to single electron trapping in the highly defective poly-Si channel (3). This effect, in addition to low poly-Si mobility, results in low drain current measured in poly-Si channel transistors (4). As an immediate consequence, a large drain current I D variability is observed in such deeply scaled devices (Fig. 1a). In order to develop a correct model predicting this I D variability, both i) the charging component and ii) the intrinsic g m -variability have to be separately characterized and physically understood to be afterwards correctly combined. The present abstract therefore aims at developing the methodology to predict the I D distribution at fixed reading gate voltage V READ by physical understanding of both effects: electron trapping and transconductance variations. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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