Cubic HfN Thin Films with Low Resistivity on Si (001) and MgO (001) Substrates
| Autor: | Xinghang Zhang, Roy A. Araujo, Haiyan Wang |
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| Rok vydání: | 2008 |
| Předmět: |
Diffraction
Materials science Diffusion barrier Transmission electron microscopy Electrical resistivity and conductivity Materials Chemistry Analytical chemistry Electrical and Electronic Engineering Thin film Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Pulsed laser deposition |
| Zdroj: | Journal of Electronic Materials. 37:1828-1831 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-008-0546-9 |
| Popis: | We deposited epitaxial and highly textured cubic HfN (B1-NaCl) thin films on single-crystal MgO (001) and Si (001) substrates, respectively, using a pulsed laser deposition technique. The HfN thin films are around 100 nm thick. Detailed microstructural characterizations, including x-ray diffraction, transmission electron microscopy (TEM), and high-resolution TEM, were carried out. Resistivity as low as 40 μΩ cm was observed by standard four-point probe measurements. The low resistivity and good diffusion barrier properties demonstrated by our preliminary Cu-diffusion tests for HfN on Si suggest that HfN could be a promising candidate diffusion barrier for Cu interconnects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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