Mechanism and modeling of silicon carbide formation and engulfment in industrial silicon directional solidification growth

Autor:	Lili Zheng, Dongli Hu, Tao Zhang, Hui Zhang, Xu Ma, Yuepeng Wan
Rok vydání:	2011
Předmět:	Silicon Chemistry Mineralogy chemistry.chemical_element Condensed Matter Physics Physics::Fluid Dynamics Inorganic Chemistry Mechanism (engineering) chemistry.chemical_compound Materials Chemistry Fluid dynamics Silicon carbide Particle Composite material Ingot Carbon Directional solidification
Zdroj:	Journal of Crystal Growth. 318:313-317
ISSN:	0022-0248
Popis:	This paper proposes a mechanism of carbon species formation and transport in the gas phase and silicon carbide particle formation and engulfment in the liquid phase. A numerical model considering various forces acting on silicon carbide particles is developed to quantify particle transport and particle engulfment. Numerical simulations are conducted to study fluid flow and temperature distribution in an industrial directional solidification system and particle distribution in the solidified silicon. Strategies to reduce carbon contamination and improve ingot quality are proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::213b85fc991b2505179b36cff030be6c https://doi.org/10.1016/j.jcrysgro.2010.11.141 Zobrazit plný text záznamu Full Text from ScienceDirect