RC Tightened Corner Test structure Design and Silicon Characterization in FinFET Technology
| Autor: | Xiaojin Li, Yabin Sun, Zhen Zhou, Lijie Sun, Guangxing Wan, Waisum Wong, Mengying Zhang, Yanling Shi |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Silicon
Computer science business.industry Transistor chemistry.chemical_element Design under test Hardware_PERFORMANCEANDRELIABILITY Ring oscillator Structural engineering Local variation Line (electrical engineering) law.invention Statistical simulation chemistry law Test structure Hardware_INTEGRATEDCIRCUITS business |
| Zdroj: | 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). |
| Popis: | In this work, we propose a novel RC tightened corner test structure for FinFET Technology. In this test structure, Parasitic RC DUTs (Design Under Test) integrated into RO (Ring Oscillator) have been designed to verify and calibrate MEOL (Mid-End-Of-Line) and BEOL (Back-End-Of-Line) RC tightened corner; On the other hands, addressable-array circuit has been used to avoid noise induced by the local variation of FEOL (Front-End-Of-Line) transistors. By the test structure silicon data, RC tightened corners generated from statistical simulation have been iterated and updated |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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