Controllable Highly Sensitive Silicon Hall Element with Improved Reliabylity Under Extreme Conditions

Autor: N.I. Omelianovskaya, A. V. Leonov, M. L. Baranochnikov, V.N. Mordkovich, V.P. Goncharov, M.M. Filatov, A. D. Mokrushin, D. M. Pazhin
Rok vydání: 2007
Předmět:
Zdroj: 2007 7th International Symposium on Electromagnetic Compatibility and Electromagnetic Ecology.
DOI: 10.1109/emceco.2007.4371698
Popis: The design features and main characteristics of the new type of magnetic field converters, i.e., the controllable Field Effect Hall Sensor based on the "silicon-on-insulator" (SOI) structure, are considered. The FEHS design features and the use of SOI structures as the design and technological basis of its production imply the uniqueness of electrical and reliability characteristics.
Databáze: OpenAIRE