Improvement of Channel Mobility of GaN-MOSFETs With Thermal Treatment for Recess Surface
| Autor: | Aya Shindome, Toshiya Yonehara, Toshiki Hikosaka, Daimotsu Kato, Shinya Nunoue, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Surface (mathematics) Materials science business.industry 02 engineering and technology Surfaces and Interfaces Thermal treatment 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Communication channel |
| Zdroj: | physica status solidi (a). 215:1700511 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201700511 |
| Databáze: | OpenAIRE |
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