Quantum well width and In composition effects on the operating characteristics of InGaAs/GaAs strained single quantum well diode lasers

Autor:	R. Ben‐Michael, D. Fekete, R. Sarfaty
Rok vydání:	1991
Předmět:	Threshold current Materials science Physics and Astronomy (miscellaneous) business.industry chemistry.chemical_element Laser Semiconductor laser theory Active layer law.invention chemistry law Optoelectronics business Quantum Indium Quantum well Diode
Zdroj:	Applied Physics Letters. 59:3219-3221
ISSN:	1077-3118 0003-6951
Popis:	In this work we study the effect of strain on the performance of highly strained InxGa1−xAs/GaAs/GaAlAs quantum well lasers (SQWL). We changed the indium concentration and the QW width and found that the threshold current density, Jth, is minimal with x∼0.4 when the width of the QW is 20 A. For x=0.3 the minimal Jth was obtained with a 90 A active layer. The best performing laser reported in this work has Jth=68 A/cm2 emitting at 1.063 μm with cavity length of 2022 μm. Comparison with GaAs/GaAlAs lasers is possible because both structures have the same optical mode confinement, and the comparison shows that SQWLs have indeed lower Jth, but the improvement in Jth with the strain is not as dramatic as predicted theoretically.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::20fdd2d771db137ea6ed627d4b099530 https://doi.org/10.1063/1.105737 Zobrazit plný text záznamu