Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections

Autor:	H. Duarte, M.-C. Calvet, O. Bersillon, Frédéric Wrobel, J.-M. Palau
Rok vydání:	2001
Předmět:	Nuclear reaction Physics Nuclear and High Energy Physics Upset Ion Nuclear physics Soft error Nuclear Energy and Engineering Memory cell Static random-access memory Electrical and Electronic Engineering Atomic physics Nucleon Scaling
Zdroj:	IEEE Transactions on Nuclear Science. 48:1946-1952
ISSN:	1558-1578 0018-9499
Popis:	Academic 128/spl times/128 bit structures are simulated to study soft error cross sections induced by high-energy nucleons (n/p) in SRAM memories. The distributions of secondary ions are obtained by the nuclear high energy transport code and analyzed in terms of energy deposited in the sensitive volume of each memory cell. Multiple-bit upset cross sections are compared to single-event upset cross sections, and trends associated with scaling effects are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::20fb6e470ab40013419f326d74dfb8ef https://doi.org/10.1109/23.983155 Zobrazit plný text záznamu