Halogen Adsorption and Reaction with Bi2(Se,Te)3 and Bi/Bi2(Se,Te)3
| Autor: | Weimin Zhou, Haoshan Zhu, Jory A. Yarmoff |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
inorganic chemicals
Materials science Annealing (metallurgy) Scattering Bilayer 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion General Energy Adsorption Electron diffraction 0103 physical sciences Halogen Physical chemistry Physical and Theoretical Chemistry 010306 general physics 0210 nano-technology |
| Zdroj: | The Journal of Physical Chemistry C. 122:16122-16131 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.8b03920 |
| Popis: | Bi2Se3 and Bi2Te3 and these same surfaces covered with Bi films are exposed to Br2 and Cl2 in ultrahigh vacuum. Low-energy electron diffraction and low-energy ion scattering are used to investigate the surface composition before and after halogen exposure. It is found that Br2 weakly chemisorbs to the Se- or Te-terminated clean surfaces and light annealing removes the adsorbates restoring the intact surfaces. In contrast, halogens dissociatively adsorb onto surfaces covered with an additional bilayer of Bi, showing a p-doping effect. Annealing these halogen-covered surfaces at 130°C causes Bi atoms to be chemically etched away and the surface reverts to a Se- or Te-termination. This work shows how halogen adsorption and reaction can be used to modify the surface termination of such materials. |
| Databáze: | OpenAIRE |
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