Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
| Autor: | Ioannis Kostakis, Qiandong Zhuang, Robert J. Young, Peter J. Carrington, Abu Syed Mahajumi, Mohammed Missous, Ana M. Sanchez, Manus Hayne, Anthony Krier |
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| Rok vydání: | 2013 |
| Předmět: |
Quenching
Photoluminescence Materials science Acoustics and Ultrasonics business.industry Nanotechnology Activation energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Blueshift Annealing (glass) Condensed Matter::Materials Science Quantum dot Monolayer Optoelectronics business Luminescence |
| Zdroj: | Journal of Physics D: Applied Physics. 46:305104 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/46/30/305104 |
| Popis: | The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski–Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 °C to 800 °C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb–As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms. |
| Databáze: | OpenAIRE |
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